Zener Diodes

Publication date: June 2008 SKE00048AED 1
本製品はRoHS指令(EU 2002/95/EC)に対応しています。
MALM062HG

Silicon planar type

For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *2ESD ±30 kV
Note) *1 : PD = 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 1 mA 5.8 6.2 6.6 V
Reverse current IRVR = 4.0 V 1.0 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 55 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for VBR mesurement.
VBR value measured at other temperature must be adjusted to VBR (25°C)
3. *: VBR guaranted 20 ms after current flow.
Package
Code
SSMini5-F3
Pin Name
1: Cathode 1 2: Anode 1, 2, 3, 4
3: Cathode 2 4: Cathode 3
5: Cathode 4
Marking Symbol: 6.2E
Internal Connection
3
(K2)
(K3)
4
1
(K1) 2
(A1,
2,
3,
4)
(K4)
5