Zener Diodes
Publication date: September 2005 SKE00027AED 1MALS068Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
SS-Mini 2 pin molde type package, optimum for high-density mounting.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *2ESD ±30 kV
Note) *1 : PT = 150 mW achieved with a printed circuit board. *2 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 5 mA 6.4 6.8 7.2V
Reverse current IRVR = 4.0 V 0.5µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 50 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. The temperature must be controlled 25°C for VBR mesurement. VBR value measured at other temperature must be adjusted to VBR (25°C) 3. *: VBR guaranted 20 ms after current flow.Marking Symbol: RE
Unit: mm1: Anode2: CathodeEIAJ: SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°