Zener Diodes

Publication date: April 2008 SKE00042AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALS068G

Silicon planar type

For ESD protection
Overview
MALS068G is optim al for cell phones and AV application, all types of
I/O circuits.
Features
High resistance to surge voltages: 30 kV guaranteed
Low ter minal capacit ance Ct for low loss, low distor tion, and good
retention of signal waveforms.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PT150 mW
Electrostatic discharge *2ESD ±30 kV
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 1 mA 6.4 6.8 7.2 V
Reverse current IRVR = 4 V 0.5 mA
Terminal capacitan ce CtVR = 0 V, f = 1 MHz 50 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : VBR guaranted 20 ms after current flow.
The temperature must be controlled 25°C for VBR measurement.
VBR value measured at other temperature must be adjusted to VBR (25°C).
Package
Code
SSMini2-F4
Pin Name
1: Anode
2: Cathode
Marking Symbol: RE