Zener Diodes
Publication date: April 2006 SKE00022CED
1
MALS068X
Silicon planar type
For constant voltage and surge absorption circuits
Features
Features
Bi-directional and high electrostatic discharge ESD
Bi-directional and high electrostatic discharge ESD
Small terminal capacitance C
Small terminal capacitance C
t
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Total power dissipation
*
1
P
T
150
mW
Junction temperature
T
j
Tj
T
150
°
C
Storage temperature
T
stg
Tstg
T
–55 to +150
°
C
Electrostatic discharge
*
2
ESD
±
15
kV
Note)
*
1 : P
T
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
Ω
, Contact discharge: 10 times)
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
VZ
V
I
Z
= 5 mA
Z = 5 mA
Z
6.5
7.0
7.5
V
Zener operating resistance
R
Z
RZ
R
I
Z
= 5 mA
Z = 5 mA
Z
20
Ω
Reverse current
I
R
V
R
= 4.0 V
R = 4.0 V
R
50
nA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
R = 0 V, f = 1 MHz
R
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25
°
C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25
°
C)
3.
*
: V
Z
guaranted 20 ms after current fl ow.
Unit : mm
1 : Cathode
2 : Cathode
EIAJ : SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°
Marking Symbol:
RX
Internal Connection
1
2
This product complies with the RoHS Directive (EU 2002/95/EC).