Zener Diodes

Publication date: January 2009 SKE00053AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALS180XG

Silicon planar type

For ESD protection
Overview
MALS180XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 15 kV guaranteed
Low ter minal capacit ance Ct for low loss, low distor tion, and good
retention of signal waveforms.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *1PT150 mW
Electrostatic discharge *2ESD ±15 kV
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage *VZIZ = 5 mA 17.5 20.0 V
Zene operating resistance RZIZ = 5 mA 60 Ω
Reverse current IRVR = 13.0 V 15 nA
Terminal capacitan ce CtVR = 0 V, f = 1 MHz 4 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
3. * : VZ guaranted 20 ms after current flow.
Package
Code
SSMini2-F4
Pin Name
1: Cathode
2: Cathode
Marking Symbol: SX