Zener Diodes

Publication date: September 2005 SKE00028AED 1MALT062H

Silicon planar type

For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *2ESD ±30 kV
Note) *1 : PD = 150 mW achieved with a printed circuit board. *2 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 1 mA 5.8 6.2 6.6V
Reverse current IRVR = 4.0 V 1.0µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 55 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. The temperature must be controlled 25°C for VBR mesurement. VBR value measured at other temperature must be adjusted to VBR (25°C) 3. *: VBR guaranted 20 ms after current flow.
Unit: mm1: Cathode 12: Cathode 23: Anode 1, 2EIAJ: SC-81 SSMini3-F2 Package
0.28±0.05
3
1 2
0.28±0.05
(0.80)
1.60+0.05
–0.03
0.12+0.05
–0.02
0.60+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3°
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80±0.05
(0.80)
1.60±0.05
3°
Marking Symbol: 6.2E
Internal Connection
213
This product complies with the RoHS Directive (EU 2002/95/EC).