Zener Diodes

Publication date: October 2007 SKE00037AED 1
MALT062HG

Silicon planar type

For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PD150 mW
Electrostatic discharge *2ESD ±30 kV
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1 : PD = 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 1 mA 5.8 6.2 6.6 V
Reverse current IRVR = 4.0 V 1.0 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 55 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for VBR mesurement.
VBR value measured at other temperature must be adjusted to VBR (25°C)
3. *: VBR guaranted 20 ms after current flow.
Package
Code
SSMini3-F3
Pin Name
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
Marking Symbol: 6.2E
Internal Connection
21
3