Zener Diodes

Publication date: October 2005 SKE00038AED 1
MANV250GE

Silicon planar type

For surge protect
Features
Large surge reduction power
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Peak pulse power *1PPP 450 W
Peak pulse current *1IPP 9 A
Maximum peak reverse voltage VRM 18 V
Total power dissipation *2PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *3ESD ±30 kV
Note) *1 : Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: PT = 150 mW achieved with a printed circuit board.
*3 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *1VBR IR = 1 mA 20.0 25.0 30.0 V
Reverse current IRVR = 18 V 10.0 mA
Clamping voltage *2VCIPP = 9.0 A, tp = 8/20 ms 50.0 V
Terminal capacitance CtIR = 0 V, f = 1 MHz 76 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: VZ guaranted 20 ms after current flow.
*2: Pulse Waveform
100
90
50
10
T2
Tt
T1
Percent of I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: RD