Switching Diodes
1
Publication date: October 2007 SKF00090AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3132EG
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•Two elements are contained in one package, allowing high-
density mounting
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 150
Peak forward current Single IFM 225 mA
Double 340
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*
Double 750
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 2 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) *: t = 1 s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
12
3
■Package
•Code
SSSMini3-F2
•Pin Name
1:Anode 1
2:Anode 2
3:Cathode 1, 2
■Marking Symbol: MU
■Internal Connection