Schottky Barrier Diodes (SBD)

1
Publication date: June 2002 SKH00118AEDMAS3795E

Silicon epitaxial planar type

For high-speed switching circuits
■Features
•High-density mounting is possible
•Optimum for high frequency rectification because of its short
reverse recovery time (trr)
•Low forward voltage VF optimum for low voltage rectification
VF = < 0.3 V (at IF = 1 mA)
•SSS-Mini type 3-pin package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage (DC) VR30 VPeak reverse voltage VRM 30 VForward current (DC)Single IF30 mADouble 20Peak forward currentSingle IFM 150 mADouble 110Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max UnitReverse current (DC) IRVR = 30 V 30 µAForward voltage (DC) VF1 IF = 1 mA 0.3 VVF2 IF = 30 mA 1.0Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pFReverse recovery time *trr IF = IR = 10 mA 1.0 nsIrr = 1 mA, RL = 100 ΩDetection efficiency ηVin = 3 V(peak) , f = 30 MHz 65 %RL = 3.9 kΩ, CL = 10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
AUnit: mm
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5°
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5°
0.80±0.05
1.20±0.05
+0.05
–0.02 0.10+0.05
–0.02
0.23+0.05
–0.02
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.2.Rated input/output frequency: 2 GHz 3.*: trr measuring instrument1: Anode 12: Anode 23: Cathode 1, 2SSSMini3-F1 Package
Marking Symbol: M3
12
3
This product complies with the RoHS Directive (EU 2002/95/EC).