Schottky Barrier Diodes (SBD)

1
Publication date: November 2007 SKH00219AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3795EG

Silicon epitaxial planar type

For high-speed switching circuits
■Features
•High-density mounting is possible
•Optimum for high frequency rectification because of its short
reverse recovery time (trr)
•Forward voltage VF optimum for low voltage rectification VF =
< 0.3 V (at IF = 1 mA)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current Single IF30 mA
Double 20
Peak forward current
Single IFM 150 mA
Double 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.3 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 30 µA
Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %
RL = 3.9 kΩ, CL = 10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz.
4.*: trr measurement circuit
■Package
•Code
SSSMini3-F2
•Pin Name
1:Anode 1
2:Anode 2
3:Cathode 1, 2
■Marking Symbol: M3
■Internal Connection
12
3