Zener Diodes

Publication date: February 2007 SKE00031AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAYS0750Y

Silicon epitaxial planar type

For ESD protection of high speed signal line
Features
Maintain signal cobs with low insertion loss, distortion.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *1PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *2ESD ±8kV
Note) *1 : PT = 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *VBR IR = 1 mA 6.0 7.5 V
Reverse current IRVR = 5 V 2 mA
Terminal capacitance CtIR = 0 V, f = 1 MHz 0.8 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *: VZ guaranted 20 ms after current flow.
Marking Symbol: CY
Unit: mm1: Anode2: CathodeEIAJ: SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°