Zener Diodes
Publication date: May 2005 SKE00023AED
1
MAYS0750Z
Silicon planar type
For surge absorption circuits
Features
Features
Small terminal capacitance C
Small terminal capacitance C
t
High electrostatic discharge ESD
High electrostatic discharge ESD
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Total power dissipation
*
1
P
T
150
mW
Junction temperature
T
j
Tj
T
150
°
C
Storage temperature
T
stg
Tstg
T
–55 to +150
°
C
Electrostatic discharge
*
2
ESD
±
12
kV
Note)
*
1 : P
T
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
Ω
, Contact discharge: 10 times)
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*
V
BR
VBR
V
I
R
= 1 mA
R = 1 mA
R
6.0
7.5
V
Reverse current
I
R
V
R
= 5 V
R = 5 V
R
2
µ
A
Terminal capacitance
C
t
I
R
= 0 V, f = 1 MHz
R = 0 V, f = 1 MHz
R
1.5
3.0
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
: V
Z
guaranted 20 ms after current fl ow.
Marking Symbol: CZ
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°
This product complies with the RoHS Directive (EU 2002/95/EC).