Zener Diodes

Publication date: July 2008 SKE00032BED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MAZ8xxxG Series

Silicon planar type

For stabilization of power supply
Features
Extremely low noise voltage caused from the diode (2.4 V to
39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Allowing to reduce the mounting area, thickness and weight
substantially, compared with those of the conventional products
Allowing both reflow and flow mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: PD = 150 mW achieved with a printed circuit board.
Common Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *1VZIZ Specified value V
Zener rise operating resistance RZK IZ Specified value Refer to the list of the
electrical characteristics
within part numbers
W
Zener operating resistance RZIZ Speci���ed value W
Reverse current IRVR Specified value mA
Temperature coefficient of zener voltage
*2SZIZ Specified value mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
4. *1
: VZ guaranted 20 ms after current flow.
*2 : Tj = 25°C to 150°C
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking symbol
Refer to the list of the electrical
characteristics within part numbers