Panasonic MAZ9xxxH Series manual

Zener Diodes

1

Publication date: November 2005 SKE00008DED

MAZ9xxxH Series

Silicon planar type

For surge absorption circuit

■Features

•Two elements anode-common type

•Power dissipation PD : 200 mW

■Absolute Maximum Ratings Ta = 25°C

Unit: mm

Parameter Symbol Rating Unit

Power dissipation *PD200 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

■Common Electrical Characteristics Ta = 25°C ± 3°C

Note) *:P

D = 200 mW achieved with a printed circuit board.

Parameter Symbol Conditions Min Typ Max Unit

Zener voltage*VZIZSpecified value V

Zener rise operating resistance RZK IZSpecified value Ω

Zener operating resistance RZIZSpecified value Ω

Reverse current IRVRSpecified value µA

0.40+0.10

–0.05

(0.65) 1.50+0.25

–0.05

2.8+0.2

–0.3

2

1

3

(0.95) (0.95)

1.9±0.1

2.90+0.20

–0.05

0.16+0.10

–0.06

0.4±0.2

5˚

10˚

0 to 0.1 1.1+0.2

–0.1

1.1+0.3

–0.1

Refer to the list of the

electrical characteristics

within part numbers

Internal Connection

1

3

2

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2.Electrostatic breakdown voltage: ±10 kV

Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

3.*: The temperature must be controlled 25°C for VZ mesurement.

VZ value measured at other temperature must be adjusted to VZ (25°C)

VZ guaranted 20 ms after current flow.

1: Cathode 1

2: Cathode 2

3: Anode

EIAJ: SC-59 Mini3-G1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).