ESD Diodes
1
Publication date: March 2004 SKE00009CED
Note) *:P
tot = 200 mW achieved with a printed circuit board.
MAZC062D
Silicon planar type
For surge absorption circuit
■Features
•Low joint capacity zener diode
•Two elements anode-common type
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Power dissipation*PD200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
1:Cathode 1
2:Cathode 2
3:Anode
EIAJ: SC-59 Mini3-G1 Package
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage*VZIZ = 5 mA 5.9 6.5 V
Zener rise operating resistance RZK IZ = 0.5 mA 100 Ω
Zener operating resistance RZIZ = 5 mA 30 Ω
Reverse current IRVR = 5.5 V 3 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 8 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 5 MHz
3.Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4.*: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
12
3
Marking Symbol: 6.2C
This product complies with the RoHS Directive (EU 2002/95/EC).