Zener Diodes

Publication date: November 2008 SKE00020BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZDxxx Series

Silicon planar type

For constant voltage, constant current, waveform clipper and
surge absorption circuit
Features
Low noise type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *PT120 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: PT = 100 mW achieved with a printed circuit board.
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *VZIZ Specified value Refer to the list of the
electrical characteristics
within part numbers
V
Zener operating resistance RZIZ Specified value W
Reverse current IRVR Specified value mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
4. * : VZ guaranted 20 ms after current flow.
Package
Code
SSSMini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol:
Refer to the list of the electrical characteristics
within part numbers