Zener Diodes

1
Publication date: November 2007 SKE00036AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZDxxxG Series

Silicon planar type

For constant voltage, constant current,
waveform clipper and surge absorption circuit
■Features
•Low noise type
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *PT120 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Common Electrical Characteristics Ta = 25°C ± 3°C *1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 5 MHz.
3.*1 :The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2:VZ guaranteed 20 ms after current flow.
Note) *:P
tot = 100 mW achieved with a printed circuit board
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *2VZIZSpecified value V
Zener operating resistance RZIZSpecified value Ω
Reverse current IRVRSpecified value µA
Refer to the list of the
electrical characteristics
within part numbers
■Package
•Code
SSSMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol
Refer to the list of the electrical
characteristics within part numbers