ESD Diodes
1
Publication date: March 2004 SKE00010CED
Note) *:P
D = 200 mW achieved with a printed circuit board.
MAZE062D
Silicon planar type
For surge absorption circuit
■Features
•Low joint capacity zener diode
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal connection
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *VZIZ = 5 mA 5.9 6.5 V
Zener rise operating resistance RZK IZ = 0.5 mA 100 Ω
Zener operating resistance RZIZ = 5 mA 30 Ω
Reverse current IRVR = 5.5 V 3 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 8 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 5 MHz.
3.Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4.*: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
0.3
2.0
±0.2
1.3
±0.1
(0.65)
1
3
2
(0.65) 0.9
±0.1
2.1
±0.1
1.25
±0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
12
3
Marking Symbol: 6.2C
1: Cathode 1
2: Cathode 2
3: Anode
EIAJ: SC-79 SMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).