Panasonic MAZLxxxH Series manual

Zener Diodes

1

Publication date: November 2005 SKE00011DED

MAZLxxxH Series

Silicon planar type

For surge absorption circuit

■Features

•Four elements anode-common type

•Power dissipation PD : 200 mW

■Absolute Maximum Ratings Ta = 25°C

Unit: mm

Parameter Symbol Rating Unit

Power dissipation *PD200 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

■Common Electrical Characteristics Ta = 25°C ± 3°C

Note) *:P

D = 200 mW achieved with a printed circuit board.

Parameter Symbol Conditions Min Typ Max Unit

Zener voltage*VZIZSpecified value V

Zener rise operating resistance RZK IZSpecified value Ω

Zener operating resistance RZIZSpecified value Ω

Reverse current IRVRSpecified value µA

2.90

1.9

±0.1

0.16

+0.10

–0.06

2.8

+0.2

–0.3

1.1

+0.3

–0.1

1.1

0 to 0.1

+0.2

–0.1

1.50

(0.65)

0.4

±0.2

+0.25

–0.05

(0.95) (0.95)

0.30

+0.10

–0.05

543

12

+0.20

–0.05

5˚

10˚

Refer to the list of the

electrical characteristics

within part numbers

Internal Connection

5

2

43

1

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2.Electrostatic breakdown voltage: ±10 kV

Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

3.*: The temperature must be controlled 25°C for VZ mesurement.

VZ value measured at other temperature must be adjusted to VZ (25°C)

VZ guaranted 20 ms after current flow.

1: Cathode 1 4: Anode

2: Cathode 2 5: Cathode 4

3: Cathode 3

EIAJ: SC-74A Mini5-G1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).