Zener Diodes

Publication date: January 2009 SKE00030CED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZQxxx Series

Silicon planar type

For constant voltage, constant current, waveform clipper and surge
absorption circuit
Features
Optimum for high-density mounting
Low noise type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *PT120 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Note) *: PT = 120 mW achieved with a printed circuit board.
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF = 10 mA 0.9 1.0 V
Zener voltage *VZIZ Specified value Refer to the list of the
electrical characteristics
within part numbers
V
Zene operating resistance RZIZ Specified value W
Reverse current IRVR Specified value mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
4. *: VZ guaranted 20 ms after current flow.
Electrical Characteristics within Part Numbers Ta = 25°C±3°C
Part number
Zener voltage
VZ (V)
Zener
operating
resistance
RZ (W)
Reverse current
IR ( mA) Marking symbol
Min Typ Max IZ
(mA) Max IZ
(mA) Max VR
(V)
MAZQ062 5.8 6.2 6.6 5 30 5 0.2 4.0 E
MAZQ068 6.4 6.8 7.2 5 20 5 0.1 4.0 F
MAZQ100 9.40 10.00 10.60 5 30 5 0.05 7 L
MAZQ200 18.80 20.00 21.20 5 80 5 0.05 15.0 V
MAZQ300 28.00 30.00 32.00 2 160 2 0.05 23.0 Y
Package
Code
USSMini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol
Refer to the list of the electrical characteristics
within part numbers