Zener Diodes
1
Publication date: October 2007 SKE00034BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZSxxxG Series
Silicon planar type
For constant voltage, constant current, waveform clip-
per and surge absorption circuit
■Features
•Low noise type
•VZ rank classified(VZ = 2.4 V to 39 V)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *Ptot 150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) *:With a printed circuit board
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *2VZIZSpecified value V
Reverse current IRVRSpecified value µA
Zener rise operating resistance RZK IZSpecified value Ω
Zener operating resistance RZIZSpecified value Ω
Temperature coefficient of zener voltage *3SZIZSpecified value mV/°C
■Common Electrical Characteristics Ta = 25°C±3°C *1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Rated input/output frequency: 5 MHz
3.*1: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2:Guaranteed at 20 ms after power application.
*3:Tj = 25°C to 150°C
1
2
Refer to the list of the
electrical characteristics
within part numbers
■Package
•Code
SSMini2-F4
•Pin Name
1: Anode
2: Cathode
■Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
■Internal Connection