Panasonic MAZTxxxH Series manual

Zener Diodes

1

Publication date: August 2008 SKE00013FED

This product complies with the RoHS Directive (EU 2002/95/EC).

MAZTxxxH Series

Silicon planar type

For surge absorption circuit

■Features

•Two elements anode-common type

•Power dissipation PD : 150 mW

■Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Power dissipation *PD150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

■Common Electrical Characteristics Ta = 25°C ± 3°C

Note) *:P

D = 150 mW achieved with a printed circuit board.

Parameter Symbol Conditions Min Typ Max Unit

Zener voltage*VZIZSpecified value V

Zener rise operating resistance RZK IZSpecified value Ω

Zener operating resistance RZIZSpecified value Ω

Reverse current IRVRSpecified value µA

Refer to the list of the

electrical characteristics

within part numbers

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2.Electrostatic breakdown voltage: ±10 kV

Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

3.* : The temperature must be controlled 25°C for VZ mesurement.

VZ value measured at other temperature must be adjusted to VZ (25°C)

VZ guaranted 20 ms after current flow.

■Package

•Pin Name

SSMini3-F2

•Pin Name

1: Cathode 1

2: Cathode 2

3: Anode

■Marking Symbol

Refer to the list of the electrical characteristics

within part numbers

■Internal Connection

1

3

2