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Zener Diodes
1
Publication date: October 2008 SKE00019BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZWxxxH Series
Silicon planar type
For surge absorption circuit
■Features
•Two elements anode-common type
•SSSMini type 3-pin package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Total power dissipation *PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Common Electrical Characteristics Ta = 25°C ± 3°C
Note) *:P
T = 150 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage *VZIZSpecified value V
Zener rise operating resistance RZK IZSpecified value Ω
Zener operating resistance RZIZSpecified value Ω
Reverse current IRVRSpecified value µA
Refer to the list of the
electrical characteristics
within part numbers
1
3
2
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3.*: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
■Package
•Code
SSSMini3-F1
•Pin Name
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
■Internal Connection