SHE00054BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008 1

Phototransistors

PNA1803L

Silicon planar type

For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
φ3 plastic package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-collector voltage (Base open) VECO 5 V
Collector current IC20 mA
Collector power dissipation *PC50 mW
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1ILVCE = 10 V, L = 1
000 lx 1.0 3.0 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V 1 500 nA
Peak sensitivity wavelength λPD VCE = 10 V 800 nm
Half-power angle θThe angle when the photocurrent is
halved 30 °
Rise time *2trVCC = 10 V, IL = 1 mA, RL = 100 W
2.5 µs
Fall time *2tf3.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
50 ΩRL
VCC
Sig. out 10%
90%
Sig. in
trtf
(Input pulse)
(Output pulse)
tr : Rise time
tf : Fall time