SHE00064AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008 1

Photo IC

PNA4601M

Photodiode with Photodetection Function

For infrared remote control systems
Features
Extension distance: 8 m or more
External parts not required
Adoption of visible light cutoff resin
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Operating supply voltage VCC – 0.5 to +7 V
Power dissipation PD200 mW
Operating ambient temperature Topr –20 to +75 °C
Storage temperature Tstg –40 to +100 °C
Soldering temperature *Tsol 260 °C
Note) *: Less than 5 s
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Operating supply voltage VCC 4.7 5.0 5.3 V
Supply current ICC No signal condition 1.8 2.4 3.0 mA
Maximum reception distance *1Lmax 8.0 10.0 m
Low level output voltage *2VOL L ≤ 8.0 m, IOL = 400 μA 0.35 0.5 V
High level output voltage VOH No signal condition, IOH = −10 μA 4.75 4.80 V
Low level pulse width *1TWL1 L = 8.0 m, 16 pulse 200 400 600 μs
TWL2 L = 0.2 m, 16 pulse, Ta = 65°C ± 3°C 100 700 μs
High level pulse width *1TWH L = 8.0 m, 16 pulse 200 400 600 μs
Center frequency fO36.7 kHz
Load resistance RL15 20 25 kW
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: Burst wave form figure 1.
*2: Constant wave form Figure 2..
400 µs400 µs 20 ms
Carrier frequency: fOCarrier frequency: fO
Figure 2Figure 1