Phototransistors

Publication date: October 2008 SHE00063AED 1
PNZ154NC

Silicon planar type

For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
Adoption of visible light cutoff resin
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-collector voltage (Base open) VECO 5 V
Collector current IC20 mA
Collector power dissipation PC100 mW
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1ILVCE = 10 V, L = 500 lx 0.7 2.0 mA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V 0.01 0.20 mA
Collector-emitter saturation voltage *1VCE(sat) IL = 1 mA, L = 1
000 lx 0.2 0.5 V
Peak sensitivity wavelength λPD VCE = 10 V 850 nm
Half-power angle θThe angle from which photocurrent
becomes 50% 27 °
Rise time *2trVCC = 10 V, IL = 5 mA, RL = 100 W4 10 ms
Fall time *2tf4 10 ms
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4 *1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
(Input pulse)
(Output pulse)
50 ΩRL
tr: Rise time
tf: Fall time
VCC
Sig. out 10%
90%
Sig. in
trtf