SHE00042DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009 1

PIN Photodiodes

PNZ334 (PN334)

Silicon planar type

For optical control systems
Features
Plastic type package (φ5)
High coupling capabillity suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Power dissipation PD100 mW
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1ILVR = 10 V, L = 1
000 lx 5.0 7.0 µA
Drain current IDVR = 10 V 0.1 10 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 6 pF
Peak sensitivity wavelength λPD VR = 10 V 850 nm
Half-power angle θThe angle when the photocurrent is
halved 70 °
Rise time *2trVR = 10 V, RL = 50 W
2 ns
Fall time *2tf2 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
50 Ω
λP = 900 nm
tr: Rise time
tf: Fall time
Sig. in
RL
VR
Sig. out
(Input pulse)
(Output pulse) 10%
90%
trtf
Note) The part number in the parenthesis shows conventional part number.