SHC00023CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008 1

Infrared Light Emitting Diodes

LN77L

GaAIAs Infrared Light Emitting Diode

For optical control systems
Features
High-power output, high-efficiency: PO = 18 mW (typ.)
Fast response and high-speed modulation capability: fC = 20 MHz (typ.)
Wide directivity: θ = 20° (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD190 mW
Forward current IF100 mA
Pulse forward current *IFP 1 A
Reverse voltage VR3 V
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Radiant power POIF = 50 mA 10 18 mW
Reverse current IRVR = 3 V 10 µA
Forward voltage VFIF = 100 mA 1.6 1.9 V
Peak emission wavelength λPIF = 50 mA 860 nm
Spectral half band width Δλ IF = 50 mA 40 nm
Half-power angle θThe angle when the radiant power is halved. 20 °
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Modulation total power output 3 dB frequency to fall from 1 MHz.
Cutoff frequency: 20 MHz
fC : 10 × log PO at f = fC = –3
PO at f = 1 MHz
3. LED might radiate red light under large current drive.
4. *: A light detection element uses a silicon diode have proofread a load with a standard device.