SHD00457BEK
Thisproductcomplieswith theRoHS Directive(EU2002/95/EC).This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2008 1Light Emitting Diodes
LN217RPHSquare Type
5.3 mm × 1.8 mm
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD70 mW
Forward current IF25 mA
Pulse forward current *IFP 150 mA
Reverse voltage VR4 V
Operating ambient temperature Topr –25 to +85 °C
Storage temperature Tstg –30 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.Electro-Optical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity IO0.3 0.6 mcd
Reverse current IRVR = 4 V 5 µA
Forward voltage VFIF = 20 mA 2.2 2.8 V
Peak emission wavelength λPIF = 20 mA 700 nm
Spectral half band width Δλ IF = 20 mA 100 nm
Directive characteristics
IO IFIF VF
IF Ta
Relative luminous intensity (%) Ambient temperature Ta (°C)Ambient temperature Ta (°C)Forward current IF (mA)
Forward voltage VF (V)Forward current IF (mA)
Luminous intensity IO (mcd)Relative luminous intensity (%)Forward current IF (mA)
Relative luminous intensity (%)Relative luminous intensity Ta
Relative luminous intensity λP
Peak emission wavelength λP (nm)
500
1000
300
100
10 0−20 80 100604020
1.6 1.8 2.0 2.42.2
31 5 10 50 10030
100
50
30
5
3
10
1
10
5
3
0.5
0.3
1
0.1
20°
30°
40°
50°
10°
0°
60°
70°
80°
90°
90°
80°
20°
30°
40°
50°
10°
60°
70°
80°
20°
40°
60°
020
20
10
30
40
50
40 60 80 100
100
600500 700 800
80
60
40
20
0
30
0
0 20 40 60 80 10020406080100
50