SHD00652BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008 1Light Emitting Diodes
LNJ414K8YRASurface Mounting Chip LED
USS Type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation PD40 mW
Forward current IF15 mA
Pulse forward current *IFP 50 mA
Reverse voltage VR3 V
Operating ambient temperature Topr –30 to +85 °C
Storage temperature Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity *IOIF = 10 mA 0.75 1.5 mcd
Reverse current IRVR = 3 V 10 µA
Forward voltage VFIF = 10 mA 2.0 2.6 V
Peak emission wavelength λPIF = 10 mA 590 nm
Spectral half band width Δλ IF = 10 mA 30 nm
Note) *: Measurement tolerance: ±20%00
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20 40 60 80 100
01.6 1.8 2.0 2.2 2.4 −20 20 40 60 80 100
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20 2040 4060 6080 80100 100
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600550 650 700
1 3 5 10 30 50 100
0°10°10°20°20°
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80°80°
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90°90°
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10
IO IFIF VF
IF Ta
Directive characteristics
Relative luminous intensity (%) Ambient temperature Ta (°C)Ambient temperature Ta (°C)Forward current IF (mA)Forward voltage VF (V)Forward current IF (mA)
Luminous intensity IO (mcd)Relative luminous intensity (%)Relative luminous intensity Ta
Relative luminous intensity λP
Peak emission wavelength λP (nm)
Relative luminous intensity (%)Forward current IF (mA)