Multi Chip Discrete

Publication date: November 2005 SJJ00348AED 1
UP05C8G

Silicon NPN epitaxial planar type (Tr)

Silicon epitaxial planar type (CCD load device)

For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932 + CCD load device
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open) VCBO 30 V
Collector-emitter voltage
(Base open) VCEO 20 V
Emitter-base voltage
(Collector open) VEBO 3 V
Collector current IC50 mA
CCD
load
device
Limiting element voltage Vmax 40 V
Limiting element current Imax 10 mA
Overall
Total power dissipation *PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Marking Symbol: 4V
Internal Connection
3
(G)
(S)
4
1
(E) 2
(B)
(C)
6(D)
5
Tr FET
Unit: mm
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
SSMini6-F1 Package
(0.30) 0.10±0.02
6 5 4
1 2 3 5°
5°
0.20+0.05
–0.02
1.60±0.050.55±0.05
0.10 max.
0 to 0.02
(0.20)
1.60±0.05
1番ピン端子表示
1.20±0.05
(0.20)
1.00±0.05
(0.50)(0.50)