Multi Chip Discrete

Publication date: October 2007 SJJ00402AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0KG8DG

Silicon epitaxial planar type (SBD)

Silicon PNP epitaxial planar type (Tr)

For digital circuits
Features
Two elements incorporated into one package (SBD + Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD240G + UNR31A3G
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
SBD
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 20 V
Forward current (Average) IF(AV) 200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward
surge current IFSM 1 A
Tr
Collector-base voltage
(Emitter open) VCBO -50 V
Collector-emitter voltage
(Base open) VCEO -50 V
Collector current IC-80 mA
Overall
Total power dissipation PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Package
Code
SSMini5-F3
Pin Name
1: Anode 4: Collector
2: Base 5: Cathode
3: Emitter
Marking Symbol: 6K
Internal Connection
3
4
1 2
5
Tr
SBD