Rev.1.00, Apr.08.2004, page 1 of 37

HSG1001

SiGeHBT

High Frequency Low Noise Amplifier

REJ03G0195-0100Z
Rev.1.00
Apr.08.2004

Features

• High power gain and low noise figure ;
• MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz
MSG = 15 dB typ. , NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz
• Transition Freque ncy
fT = 35 GHz typ. at f = 1 GHz
• VCEO = 3.5 V
• Ideal for 2.4 GHz / 5 GHz Ban d WL AN a n d C or dle ss p ho ne ap pl i cat i ons.

Outline

1
2
3
4
1. Emitter
2. Collecto
r
3. Emitter
4. Base
CMPAK-4
Note: Marking is "VD-".

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 8V
Collector to emitter voltage VCEO 3.5 V
Emitter to base voltage VEBO 1.2 V
Collector current IC35 mA
Pc 100 mWCollector power dissipation
PcNote1 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Doubl e side )