Rev.1.00, Apr.12.2004, page 1 of 37

HSG1002

SiGeHBT

High Frequency Low Noise Amplifier

REJ03G0196-0100Z
Rev.1.00
Apr.12.2004
Features
• High power gain and low noise figure ;
• MSG = 21 dB typ. , NF = 0.7 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz
MSG = 20 dB typ. , NF = 0.8 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz
MSG = 16 dB typ. , NF = 1.2 dB typ. at VCE = 2 V,IC = 10 mA, f = 5.8 GHz
• Transition Freque ncy
fT = 38 GHz typ. at f = 1 GHz
• VCEO = 3.5 V
• Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
1
2
3
4
1. Emitter
2. Collecto
r
3. Emitter
4. Base
MFPAK-4

VE-

1
23
4
Note: Marking is "VE-".
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 8V
Collector to emitter voltage VCEO 3.5 V
Emitter to base voltage VEBO 1.2 V
Collector current IC35 mA
Pc 80 mWCollector power dissipation
Pcnote1 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Doubl e side )