CY7C1217H

Switching Characteristics Over the Operating Range [10, 11]

 

 

 

 

 

 

 

 

 

 

 

 

 

133 MHz

100 MHz

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

t

 

V (Typical) to the First Access[12]

1

 

1

 

ms

POWER

 

DD

 

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

10

 

ns

tCH

 

Clock HIGH

2.5

 

4.0

 

ns

tCL

 

Clock LOW

2.5

 

4.0

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid after CLK Rise

 

7.5

 

8.0

ns

tDOH

 

Data Output Hold after CLK Rise

2.0

 

2.0

 

ns

tCLZ

 

Clock to Low-Z[13, 14, 15]

0

 

0

 

ns

tCHZ

 

Clock to High-Z[13, 14, 15]

 

3.5

 

3.5

ns

tOEV

 

 

 

LOW to Output Valid

 

3.5

 

3.5

ns

OE

tOELZ

 

 

 

LOW to Output Low-Z[13, 14, 15]

0

 

0

 

ns

OE

tOEHZ

 

 

 

HIGH to Output High-Z[13, 14, 15]

 

3.5

 

3.5

ns

OE

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

2.0

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

Set-up before CLK Rise

1.5

 

2.0

 

ns

ADSP,

ADSC

tADVS

 

 

 

 

 

Set-up before CLK Rise

1.5

 

2.0

 

ns

ADV

tWES

 

 

 

 

 

 

 

 

 

 

[A:D] Set-up before CLK Rise

1.5

 

2.0

 

ns

GW,

BWE,

BW

tDS

 

Data Input Set-up before CLK Rise

1.5

 

2.0

 

ns

tCES

 

Chip Enable Set-up

1.5

 

2.0

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

0.5

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

ADSP,

ADSC

tWEH

 

 

 

 

 

 

 

 

 

 

[A:D] Hold after CLK Rise

0.5

 

0.5

 

ns

GW,

BWE,

BW

tADVH

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

ADV

tDH

 

Data Input Hold after CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

0.5

 

ns

Notes:

10.Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.

11.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

12.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated.

13.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

14.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

15.This parameter is sampled and not 100% tested.

Document #: 38-05670 Rev. *B

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Cypress CY7C1217H manual Switching Characteristics Over the Operating Range 10
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CY7C1217H specifications

The Cypress CY7C1217H is a high-performance synchronous static random-access memory (SRAM) device that offers an array of features making it suitable for a diverse range of applications. With a configuration of 1 Meg x 16 bits, this component is well-suited for use in high-speed data processing systems, instrumentation, networking, and other applications that demand rapid-read and write cycles.

One of the standout features of the CY7C1217H is its high-speed operation. It supports a clock frequency of up to 167 MHz, making it ideal for systems that require fast data access and transfer rates. This high-speed capability is complemented by a low-power consumption profile, which is critical for battery-operated devices and energy-efficient applications. The part operates on a supply voltage of 1.65V to 1.95V, allowing for compatibility with modern low-voltage digital systems.

The device utilizes a dual-port architecture, enabling simultaneous access from multiple processors or data buses. This dual-port design significantly improves performance by allowing multiple data transactions to occur simultaneously, thus increasing overall system throughput. Additionally, the CY7C1217H features an asynchronous read and write capability, allowing for flexible operation in various system configurations.

In terms of memory organization, the CY7C1217H employs a multiplexed address input design, which helps optimize pin count and leads to more efficient PCB layouts. The use of a XY address decoding scheme allows for straightforward integration into existing systems while maintaining high performance.

Another notable characteristic of this SRAM is its reliability and durability. The device is built using Cypress's advanced trench technology, providing inherent robustness against environmental stress factors. This ensures a longer lifespan and improved performance consistency over time.

Furthermore, the CY7C1217H supports a range of operating temperatures, making it suitable for both commercial and industrial applications. Whether used in consumer electronics or critical industrial control systems, this SRAM's versatility ensures it can meet diverse design requirements.

In summary, the Cypress CY7C1217H synchronous SRAM combines high-speed performance, low power consumption, and dual-port capabilities with robust design characteristics. Its versatility and reliability make it an excellent choice for engineers looking to enhance their high-performance applications across various sectors.
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