Fairchild FDD6690A, MOSFET manual Symbol Parameter Test Conditions Min Typ

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Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

Symbol

Parameter

 

Test Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

Drain–Source Diode Characteristics and Maximum Ratings

 

 

 

 

IS

Maximum Continuous Drain–Source Diode Forward Current

 

 

2.3

A

VSD

Drain–Source Diode Forward Voltage

VGS = 0 V,

IS = 2.3 A (Note 2)

 

0.76

1.2

V

trr

Diode Reverse Recovery Time

 

IF = 12 A,

diF/dt = 100 A/µs

 

24

 

nS

Qrr

Diode Reverse Recovery Charge

 

 

 

 

13

 

nC

 

 

 

 

 

 

 

 

 

Notes:

1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 45°C/W when mounted on a

b) RθJA = 96°C/W when mounted

1in2 pad of 2 oz copper

on a minimum pad.

Scale 1 : 1 on letter size paper

2.Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

PD

3. Maximum current is calculated as:

R DS(ON)

where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD6690A

FDD6690A Rev. EW)

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Contents 30V N-Channel PowerTrench Mosfet Thermal CharacteristicsPackage Marking and Ordering Information Dynamic Characteristics Electrical CharacteristicsOff Characteristics On Characteristics NoteDrain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min TypFDD6690A Typical CharacteristicsGate Charge Characteristics Crossvolt