Fairchild 2N4123 manual Absolute Maximum Ratings, Thermal Characteristics, Symbol Parameter

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2N4123

C

TO-92

 

B E

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

 

 

Symbol

Parameter

 

Value

Units

 

 

 

 

 

VCEO

Collector-Emitter Voltage

 

30

V

VCBO

Collector-Base Voltage

 

40

V

 

 

 

 

 

VEBO

Emitter-Base Voltage

 

5.0

V

IC

Collector Current - Continuous

 

200

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

 

 

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

 

 

2N4123

 

PD

Total Device Dissipation

 

 

625

mW

 

Derate above 25°C

 

 

5.0

mW/°C

RθJC

Thermal Resistance, Junction to Case

 

83.3

°C/W

 

 

 

 

 

RθJA

Thermal Resistance, Junction to Ambient

 

200

°C/W

 

 

 

 

 

 

2N4123

© 2001 Fairchild Semiconductor Corporation

2N4123, Rev A

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Contents Symbol Parameter Thermal CharacteristicsSymbol Characteristic Max Units Absolute Maximum RatingsSymbol Parameter Test Conditions Min Max Units NPN General Purpose Amplifier Electrical CharacteristicsNPN General Purpose Amplifier Typical CharacteristicsNoise Figure vs Frequency NPN General Purpose Amplifier Typical CharacteristicsNoise Figure vs Source Resistance Turn-On Time vs Collector CurrentCurrent Gain Output Admittance Storage Time vs Collector CurrentVoltage Feedback Ratio NPN General Purpose Amplifier Test Circuits Delay and Rise Time Equivalent Test CircuitCrossvolt