Cypress CY7C1217H manual Features, Selection Guide Functional Description1, MHz 100 MHz Unit

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CY7C1217H

1-Mbit (32K x 36) Flow-Through Sync SRAM

Features

•32K x 36 common I/O

•3.3V core power supply (VDD)

•2.5V/3.3V I/O power supply (VDDQ)

•Fast clock-to-output times

— 6.5 ns (for 133-MHz version)

•Provide high-performance 2-1-1-1 access rate

•User-selectable burst counter supporting Intel→ Pentium→ interleaved or linear burst sequences

•Separate processor and controller address strobes

•Synchronous self-timed write

•Asynchronous output enable

•Available in JEDEC-standard lead-free 100-Pin TQFP package

•“ZZ” Sleep Mode option

Selection Guide

Functional Description[1]

The CY7C1217H is a 32K x 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is

6.5ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automati- cally for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables

(BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

The CY7C1217H allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

The CY7C1217H operates from a +3.3V core power supply while all outputs may operate either with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

 

133 MHz

100 MHz

Unit

Maximum Access Time

6.5

8.0

ns

 

 

 

 

Maximum Operating Current

225

205

mA

 

 

 

 

Maximum Standby Current

40

40

mA

 

 

 

 

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

•

198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05670 Rev. *B

 

Revised July 6, 2006

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Contents Selection Guide Functional Description1 Features133 MHz 100 MHz Unit Cypress Semiconductor CorporationCY7C1217H Logic Block Diagram15CY7C1217H Pin Configuration Pin TqfpPin Descriptions Linear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDFunctional Overview Parameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsAddress Cycle Description Used Function Truth Table for Read/Write2Operating Range Maximum RatingsAmbient RangeThermal Resistance9 Capacitance9AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 10 Read Cycle Timing16 Timing DiagramsAdsc Write Cycle Timing16DON’T Care Undefined Read/Write Timing16, 18ZZ Mode Timing20 Ordering Information Package DiagramPin Tqfp 14 x 20 x 1.4 mm Document History Issue Date Orig. Description of Change

CY7C1217H specifications

The Cypress CY7C1217H is a high-performance synchronous static random-access memory (SRAM) device that offers an array of features making it suitable for a diverse range of applications. With a configuration of 1 Meg x 16 bits, this component is well-suited for use in high-speed data processing systems, instrumentation, networking, and other applications that demand rapid-read and write cycles.

One of the standout features of the CY7C1217H is its high-speed operation. It supports a clock frequency of up to 167 MHz, making it ideal for systems that require fast data access and transfer rates. This high-speed capability is complemented by a low-power consumption profile, which is critical for battery-operated devices and energy-efficient applications. The part operates on a supply voltage of 1.65V to 1.95V, allowing for compatibility with modern low-voltage digital systems.

The device utilizes a dual-port architecture, enabling simultaneous access from multiple processors or data buses. This dual-port design significantly improves performance by allowing multiple data transactions to occur simultaneously, thus increasing overall system throughput. Additionally, the CY7C1217H features an asynchronous read and write capability, allowing for flexible operation in various system configurations.

In terms of memory organization, the CY7C1217H employs a multiplexed address input design, which helps optimize pin count and leads to more efficient PCB layouts. The use of a XY address decoding scheme allows for straightforward integration into existing systems while maintaining high performance.

Another notable characteristic of this SRAM is its reliability and durability. The device is built using Cypress's advanced trench technology, providing inherent robustness against environmental stress factors. This ensures a longer lifespan and improved performance consistency over time.

Furthermore, the CY7C1217H supports a range of operating temperatures, making it suitable for both commercial and industrial applications. Whether used in consumer electronics or critical industrial control systems, this SRAM's versatility ensures it can meet diverse design requirements.

In summary, the Cypress CY7C1217H synchronous SRAM combines high-speed performance, low power consumption, and dual-port capabilities with robust design characteristics. Its versatility and reliability make it an excellent choice for engineers looking to enhance their high-performance applications across various sectors.
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