Transcend Information TS1~2GUSD-S3 manual Bus Operating Conditions General, Power Supply Voltage

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TS1~2GUSD-S3

microSD Memory Card + Reader S3

 

 

 

Bus Operating Conditions

General

Parameter

Symbol

Min.

Max.

Unit

Peak voltage on all lines

 

-0.3

VDD+0.3

V

All Inputs

 

 

 

 

Remark

Input Leakage Current

 

-10

10

µA

All Outputs

 

 

 

 

Output Leakage Current

-10

10

µA

Power Supply Voltage

Parameter

Symbol

Min.

Max.

Unit

Supply voltage

VDD

2.0

3.6

V

 

 

 

 

 

Supply voltage specified in OCR register

 

 

 

 

 

 

 

 

 

Supply voltage differentials (VSS1, VSS2)

 

-0.3

0.3

V

Power up time

 

 

250

ms

Remark

CMD0, 15,55,ACMD41 commands

Except CMD0, 15,55, ACMD41 commands

From 0v to VDD Min.

Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.

Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:

Parameter

Symbol

Min.

Max.

Unit

Bus signal line capacitance

CL

 

100

pF

Single card capacitance

CCARD

 

10

pF

Maximum signal line inductance

 

 

16

nH

Pull-up resistance inside card (pin1)

RDAT3

10

90

 

 

 

 

 

Remark

fPP ≤ 20 MHz, 7 cards

fPP ≤ 20 MHz

May be used for card detection

Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host.

Parameter

Symbol

Min.

Max.

Unit

Pull-up resistance

RCMD, RDAT

10

100

Bus signal line capacitance

CL

 

250

pF

Remark

To prevent bus floating fPP ≤ 5 MHz, 21 cards

Transcend Information Inc.

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Contents Pin Definition Description FeaturesPlacement MicroSD Memory Card + Reader S3Architecture Power Supply Voltage Bus Signal Line LoadBus Operating Conditions General Parameter Symbol Min Max Unit Remark Bus Signal LevelsBus Timing Reliability and Durability OCR register Register InformationPRV MIDOID PNMCSD Register CRCTaac CsdstructureNsac TranspeedCCC Readblkmisalign ReadbllenReadblpartial always = 1 in SD Memory Card WriteblkmisalignCsizemult CsizeVDDRCURRMIN, Vddwcurrmin VDDRCURRMAX, VddwcurrmaxSectorsize EraseblkenWritebllen WpgrpenableWpgrpsize R2WFACTORPermwriteprotect WriteblpartialFileformatgrp CopyTS1~2GUSD-S3 DSR Register Optional RCA RegisterSCR Register ScrstructureSdspec Datastataftererase SdsecuritySdbuswidths Mechanical Description Top View Mechanical Description Bottom View Mechanical Description Keep Out Area MicroSD package Dimensions Placement Dimensions MicroSD Reader S3System Requirements Block Diagram PinoutsPin Identification General DC Characteristics Bus Signal Level

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