Bus Operating Conditions General | Transcend Information 2GSDM80

TS128M~2GSDM80	128M~2GB miniSD Memory Card

Bus Operating Conditions

• General

Parameter	Symbol	Min.	Max.	Unit
Peak voltage on all lines		-0.3	VDD+0.3	V
All Inputs

Remark

Input Leakage Current		-10	10	µA
All Outputs

Output Leakage Current

-10

µA

• Power Supply Voltage

Parameter	Symbol	Min.	Max.	Unit
Supply voltage	VDD	2.0	3.6	V

Supply voltage specified in OCR register		2.7	3.6	V

Supply voltage differentials (VSS1, VSS2)		-0.3	0.3	V
Power up time			250	ms

Remark

CMD0, 15,55,ACMD41 commands

Except CMD0, 15,55, ACMD41 commands

From 0v to VDD Min.

Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.

•Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:

Parameter	Symbol	Min.	Max.	Unit
Bus signal line capacitance	CL		100	pF
Single card capacitance	CCARD		10	pF
Maximum signal line inductance			16	nH
Pull-up resistance inside card (pin1)	RDAT3	10	90	kΩ

Remark

fPP ≤ 20 MHz, 7 cards

fPP ≤ 20 MHz

May be used for card detection

Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host.

Parameter	Symbol	Min.	Max.	Unit
Pull-up resistance	RCMD, RDAT	10	100	kΩ
Bus signal line capacitance	CL		250	pF

Remark

To prevent bus floating fPP ≤ 5 MHz, 21 cards

Transcend Information Inc.

TS128M~2GSDM80

128M~2GB miniSD Memory Card