New Products | MB90890 Series |
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Fig. 4 provides the specifications for
The interruption vector is transmitted to the upper bank flash memory to rewrite the flash memory in the lower bank, and vice versa. Thus,
■The software
writing /erasing of flash memory
In the new series, settable
to protect individual sectors. An 0 setting in the bit sets
“ ”
the
operations. Once 0 is set, the 1 setting (to enable the
“ ”“ ”
Figure 4 Specifications for
write/erase) is disabled until any reset factor can be generated. This ensures that the flash memories are fully protected against write/erase attempts even in the case of program runaway.
■Dual-operation flash memory-integrated microcontroller
substitutes for an external EEPROM
Using the
●Reduced system board mounting area
The mounting area equivalent to an EEPROM footprint is reduced.
●Available
Eight
●Faster write speed
The targeted write time is 32μs/byte (typical), markedly faster than that with EEPROM.
Available transmission of interruption vector domain
Allowable alternative use for EEPROM | SENbit=0 | Compatible with program updates | SENbit=1 | ||
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Upper Bank |
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Lower Bank |
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14
FIND Vol.21
No.1 2003