CHAPTER 16 ELECTRICAL SPECIFICATIONS
User’s Manual U12978EJ3V0UD 211
System Clock Oscillation Circuit Characteristics (TA = −
−−
−40 to +85°
°°
°C, VDD = 4.0 to 5.5 V)
Resonator Recommended Circuit Parameter Conditions MIN. TYP . MAX. Unit
Oscillator frequency (fX)Note 1 6.0 6.0 6.0 MHzCrystal
X2X1V
PP
C2C1
Oscillation stabilization
timeNote 2
10 ms
X1 input frequency (fX)Note 1 6.0 6.0 6.0 MHzExternal
clock
X1 X2
OPEN
X1 input high-low-level
width (tXH, tXL)
71 83 ns
Notes 1. Indicates only oscillator characteristics. Refer to AC Characteristics for the instruction execution
time.
2. Time required to oscillation after reset or STOP mode release. Use a resonator that can stabilize
oscillation before the oscillation stabilization time elapses.
Caution When using the system clock oscillator, wire as follows in the area enclosed by the broken lines
in the above figure to avoid an adverse effect from wiring capacitance.
•Keep the wiring length as short as possible.
•
••
•Do not cross the wiring with other signal lines.
•
••
•Do not route the wiring near a signal line through which a high fluctuating current flows.
•
••
•Always make the ground point of the oscillator capacitor the same potential as VSS0.
•
••
•Do not ground the capacitor to a ground pattern through which a high current flows.
•
••
•Do not fetch signals from the oscillator.
Remark For the resonator selection and oscillator constant, customers are required to either evaluate the
oscillation themselves or apply to the resonator manufacturer for evaluation.
Flash Memory Write/Erase Characteristics (TA = 10 to 40°
°°
°C, VDD = 4.0 to 5.5 V) (
µ
µµ
µ
PD78F9801 only)
Parameter Symbol Condit ions MIN. TYP. MAX. Unit
Write current (VDD pin) IDDW When VPP supply voltage = VPP1
(in 6.0 MHz operation mode)
18Note mA
Write current (VPP pin) IPPW When VPP supply voltage = VPP1 7.5 mA
Erase current (VDD pin) IDDE When VPP supply voltage = VPP1
(in 6.0 MHz operation mode)
18Note mA
Erase current (VPP pin) IPPE When VPP supply voltage = VPP1 100 m A
Unit erase time ter 111s
Total erase time tera 20 s
Write count Erase/writ e are regarded as 1 cycle. 1 Times
VPP0 In normal operation 0 0.2VDD VVPP supply voltage
VPP1 During flash memory programming 9.7 10.0 10.3 V
Note The current flowing to the ports (including the current flowing through the on-chip pull-up resistors) is not
included.