NXP Semiconductors PIP3210-R - page 11

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.28. Short circuit load threshold voltage.
VBL(TO) = f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C
Fig.29. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.30. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
Fig.31. Typical overload current, VBL = 8V.
IL = f(Tj); parameter VBG = 13V;tp = 300 µs
Fig.32. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
Fig.33. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
0
5
10
15
20
25
30
35
01020304050
VBG / V
VBL(TO)
/ V
min.
max.
typ. 25˚C
BUK215-50Y
30
35
40
45
50
-50 0 50 100 150 200
Tj / OC
IL(lim) / A
01020304050
10 nF
1nF
100pF
C
BL
V
BL
/ V
VBL(TO) / V
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-50 0 50 100 150 200
Tj / OC
I
G
/ mA
-200
-150
-100
-50
0
-20 -15 -10 -5 0
V
BG
/ V
D =
tptp
T
T
P
t
D
Zth j-mb ( K / W )
t / s 1e+02
1e-011e-03
1e-05
1e-07
1e+01
1e-03
1e-02
1e-01
1e+00
D =
0.5
0.2
0.1
0.05
0.02
0
September 2001 11 Rev 1.000