NXP Semiconductors PIP3210-R manual - page 7

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, tp = 300 µs.
RON = f(Tj); parameter VBG; condition IL = 10 A
Fig.6. Typical on-state characteristics, Tj = 25 ˚C.
IL = f(Tj); parameter VBG; tp = 250 µs
Fig.7. Typical supply characteristics, 25 ˚C.
IG = f(VBG); parameter VIG
Fig.8. Typical on-state resistance,Tj = 25 ˚C.
RON = f(VBG); condition IL = 10 A; tp = 300 µs
Fig.9. Typical operating supply current.
IG = f(Tj); parameters IL, VBG; condition VIG = 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG VSG
RS
VLG
LOAD
VBL
0
1
2
3
4
5
010203040506070
VBG / V
IBG(ON) / mA
OPERATING VIG = 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT VIG = 0 V
0
20
40
60
80
-50 0 50 100 150 200
T
j
/
O
C
R
ON
/ mOhm
V
BG
= 6 V
9 V =< V
BG
=< 35 V
typ
.
R
ON
/ mOhm
20
22
24
26
28
30
32
34
36
38
40
1 10 100
V
BG
/ V
R
ON
max
0
10
20
30
40
50
012
V
BL
/ V
I
L
/ A
5
6
7
V
BG
/ V > = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150 200
T
j
/
O
C
I
G
/ mA
lL > IL(TO)
V
BG
= 50 V
9 V <= V
BG
<= 35 V
typ.
l
L
= 0 A
l
L
> I
L(TO)
September 2001 7 Rev 1.000