NXP Semiconductors TDA8560Q power amplier with diagnostic facility TDA8560Q

1996 Jan 08 8
Philips Semiconductors Product specification
2 × 40 W/2 Ω stereo BTL car radio
power amplifier with diagnostic facility TDA8560Q
AC CHARACTERISTICS
VP= 14.4V; RL=2Ω; f= 1 kHz; Tamb=25°C; measured in Fig.6; unless otherwise specified.
Notes
1. Dynamic distortion detector active.
2. Frequency response externally fixed.
3. Vripple =V
ripple(max) = 2V (p-p); Rs=0Ω.
4. B =20 Hz to 20kHz; Rs=0Ω.
5. B =20 Hz to 20kHz; Rs=10kΩ.
6. B =20 Hz to 20kHz; independent of Rs.
7. Po= 25W; Rs=10kΩ.
8. Vi=V
i(max) = 1V (RMS).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD =0.5% 25 30 −W
THD = 10% 33 40 −W
THD = 30% 45 55 −W
Pooutput power VP= 13.2 V
THD = 0.5% −25 −W
THD = 10% −35 −W
THD total harmonic distortion Po=1W −0.1 −%
V12 ≤0.6 V; note1 −10 −%
B power bandwidth THD =0.5%;
Po=−1dB
with respect to 25 W
−20 to 20000 −Hz
flr low frequency roll-off at−1 dB; note 2 −25 −Hz
fhr high frequency roll-off at −1dB 20 −−kHz
Gvclosed loop voltage gain 39 40 41 dB
SVRR supply voltage ripple rejection
on note 3 40 −−dB
mute note 3 50 −−dB
standby note 3 80 −−dB
Ziinput impedance 25 30 38 kΩ
Vno noise output voltage
on note 4 −200 250 µV
on note 5 −250 −µV
mute note 6 −135 −µV
α
cs channel separation note 7 45 −−dB
∆Gvchannel unbalance −− 1dB
V
ooutput voltage in mute note 8 −− 5mV