Transistors

1
Publication date: January 2003 SJC00008BED
2SA1018

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC1473
Features
High collector-emitter voltage (Base open) VCEO
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 250 V
Collector-emitter voltage (Base open) VCEO 200 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC70 mA
Peak collector current ICP 100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 200 V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 5V
Collector-emitter cut-off current (Base open)
ICEO VCE = 120 V, IB = 0 1µA
Forward current transfer ratio *hFE VCE = 10 V, IC = 5 mA 60 220
Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA 1.5 V
Transition frequency fTVCB = 10 V, IE = 10 mA, f = 200 MHz 50 MHz
Collector output capacitance Cob VCB = 10 V, IE =0, f = 1 MHz 10 pF
(Common base, input open circuited)
Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Rank Q R
hFE 60 to 150 100 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).