2SA1018
2SJC00008BED
VCE(sat) IChFE ICfT IE

PC TaIC VCE IC VBE

Cob VCB ICEO Ta
0 16040 12080 14020 10060
0
1000
800
600
400
200
Collector power dissipation PC (mW)Ambient temperature Ta (°C)
0−12−10−8−2−6−4
0
−100
−80
−60
−40
−20
T
a
= 25°C
− 0.2 mA
− 0.1 mA
− 0.3 mA
− 0.4 mA
− 0.5 mA
− 0.6 mA
− 0.7 mA
− 0.8 mA
− 0.9 mA
I
B
= −1.0 mA
Collector current IC (mA)Collector-emitter voltage VCE (V)
0−2.0−1.6− 0.4 −1.2− 0.8
0
−120
−100
−80
−60
−40
−20
V
CE
= −10 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE (V)Collector current IC (mA)
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)Collector current I
C
(mA)
− 0.1 −1−10 −100
0
300
250
200
150
100
50
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC (mA)
0.1 1 10 100
0
120
100
80
60
40
20
V
CB
= −10 V
T
a
= 25°C
Transition frequency f
T
(MHz)Emitter current I
E
(mA)
−1−10 −100
0
20
16
12
8
4
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)Collector output capacitance (Common base, input open circuited) Cob (pF)
0 24020016040 12080
1
10
100
1000
10000 VCE = −120 V
Ambient temperature Ta (°C)
ICEO (Ta)
ICEO (Ta = 25°C)

This product complies with the RoHS Directive (EU 2002/95/EC).