Transistors

1
Publication date: February 2003 SJC00009BED
2SA1022

Silicon PNP epitaxial planar type

For high-frequency amplification
Complementary to 2SC2295
Features
High frequency voltage fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC30 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCE = 10 V, IC = 1 mA 0.7 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 20 V, IB = 0 100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 5 V, IC = 0 10 µA
Forward current transfer ratio *hFE VCE = 10 V, IC = 1 mA 70 220
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.1 V
Transition frequency fTVCB = 10 V, IE = 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF VCB = 10 V, IE = 1 mA, f = 5 MHz 2.8 dB
Reverse transfer impedance Zrb VCB = 10 V, IE = 1 mA, f = 2 MHz 22
Reverse transfer capacitance Cre VCE = 10 V, IC = 1 mA, f = 10.7 MHz 1.2 pF
(Common emitter)
Electrical Characteristics Ta = 25°C ± 3°C
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
Rank B C
hFE 70 to 140 110 to 220
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).