Transistors
1
Publication date: February 2003 SJC00009BED
2SA1022Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■Features
•High frequency voltage fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCE = −10 V, IC = −1 mA − 0.7 V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −5 V, IC = 0 −10 µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −1 mA 70 220
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 dB
Reverse transfer impedance Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz 22 Ω
Reverse transfer capacitance Cre VCE = −10 V, IC = −1 mA, f = 10.7 MHz 1.2 pF
(Common emitter)
■Electrical Characteristics Ta = 25°C ± 3°C
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
Rank B C
hFE 70 to 140 110 to 220
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification