2SA1022
2SJC00009BED

hFE ICCob VCB Cre VCE

PC TaIC VCE VCE(sat) IC

fT IEGP ICNF IE

0 16040 1208002402001601208040Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0108264
0
30
25
20
15
10
5
T
a
= 25°C
I
B
= 250 µA
200 µA
150 µA
100 µA
50 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0.1 110 100
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 110 100012010080604020VCE = 10 VTa = 75°C25°C25°C
Forward current transfer ratio hFE

Collector current IC (mA)

0.1 110 100
0
6
5
4
3
2
1
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
110 100
0
5
4
3
2
1
I
C
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Collector-emitter voltage V
CE
(V)
Reverse transfer capacitance C
re
(pF) (Common emitter)
0.1 1 10 100
0
600
500
400
300
200
100
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
0.1 110 100
0
24
20
16
12
8
4
V
CE
= 10 V
f = 100 MHz
T
a
= 25°C
Power gain G
P
(dB)
Collector current I
C
(mA)
0.1 1 10
0
5
4
3
2
1
V
CB
= 10 V
f = 100 MHz
T
a
= 25°C
Noise figure NF (dB)
Emitter current I
E
(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).