2SA1022
2SJC00009BED
hFE ICCob VCB Cre VCE
PC TaIC VCE VCE(sat) IC
fT IEGP ICNF IE
0 16040 1208002402001601208040Collector power dissipation PC (mW)Ambient temperature Ta (°C)
0−10−8−2−6−4
0
−30
−25
−20
−15
−10
−5
T
a
= 25°C
I
B
= −250 µA
−200 µA
−150 µA
−100 µA
−50 µA
Collector current IC
(mA)Collector-emitter voltage V
CE
(V)
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat)
(V)Collector current I
C
(mA)
− 0.1 −1−10 −100012010080604020VCE = −10 VTa = 75°C25°C−25°CForward current transfer ratio hFE
Collector current IC (mA)
− 0.1 −1−10 −100
0
6
5
4
3
2
1
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) Cob
(pF)−1−10 −100
0
5
4
3
2
1
I
C
= −1 mA
f = 10.7 MHz
T
a
= 25°C
Collector-emitter voltage V
CE
(V)
Reverse transfer capacitance Cre
(pF) (Common emitter)0.1 1 10 100
0
600
500
400
300
200
100
V
CB
= −10 V
T
a
= 25°C
Transition frequency fT
(MHz)Emitter current I
E
(mA)
− 0.1 −1−10 −100
0
24
20
16
12
8
4
V
CE
= −10 V
f = 100 MHz
T
a
= 25°C
Power gain GP
(dB)Collector current I
C
(mA)
0.1 1 10
0
5
4
3
2
1
V
CB
= −10 V
f = 100 MHz
T
a
= 25°C
Noise figure NF (dB)Emitter current I
E